MAPCON

Important Dates

01

Initial Submission

10 November 2026

02

Shortlisting the Finalists

20 November 2026

03

Final Evaluation and Results

During MAPCON 2026

General Guidelines

01

The participant should be a bonafide student, studying a course of engineering (BE/ B.Tech, M.E./ M.Tech., PhD.) in a recognized college/university. This contest is not open to working professionals enrolled as external/part-time candidates for any such course.

02

Students can form a team limited to a maximum of 4 members either from the same institution or multiple institutions. The prize money may be shared in such a case.

03

Finalists should present the fabricated prototype, experimental measurements along with other deliverables during MAPCON 2026 for final round.

04

Decisions made by the MAPCON 2026 SDC jury shall be final and binding on all participants. No representations shall be entertained post event.

05

Each shortlisted team will receive financial support of 5000 INR as contingency support.

Registration and Submission will open soon
01

Design of a Wideband Filtering Antenna with Dual Notch Bands

Introduction

Modern wireless communication systems often require antennas that can operate over a wide frequency range while suppressing unwanted interference from specific frequency bands. A wideband filtering antenna with band-notch characteristics combines wideband radiation and frequency-selective rejection in a single compact structure, thereby reducing the need for additional filtering circuits. In this assignment, students will design and simulate a wideband antenna operating from 2–6 GHz with two independently controlled rejected bands centered around 2.4 GHz and 5.8 GHz. The design will help students understand wideband antenna design, impedance matching, bandwidth enhancement, band-notch generation, and the effect of slots or resonating structures on antenna performance.

Design Specifications and Rules

Frequency Range

2–6 GHz

Characteristic Impedance

50 Ω

First Notch Band

2.4 GHz (100 MHz bandwidth)

Second Notch Band

5.8 GHz (100 MHz bandwidth)

S11

≤ −10 dB over the desired passband

VSWR

≤ 2 over the desired passband

Gain

≥ 3 dBi over the major portion of the operating band

Average Radiation Efficiency

≥ 70% outside the notch bands

Substrate

FR-4 or any RF-grade laminate

Feed

50 Ω microstrip line or suitable feeding technique

Must Include

  • Antenna structure with integrated filtering design
  • Simulation of S11, gain, radiation pattern, and filtering response
  • Impedance matching demonstration
  • Fabricated prototype (recommended)
02

Design of a Compact Dual-Band RF Amplifier

Introduction

RF amplifiers are fundamental building blocks in wireless communication, IoT, telemetry, and low-power RF systems. Designing a compact amplifier that operates efficiently at multiple frequency bands while maintaining adequate gain, narrow bandwidth, stability, and controlled output power presents an important practical RF design challenge. In this problem, participants are required to design, simulate, fabricate, and characterize a dual-band RF amplifier operating at 433 MHz and 866 MHz. The design should provide sufficient gain at both frequencies with narrow passbands and should demonstrate effective RF matching, stability, and practical PCB implementation.

Design Specifications and Rules

Operating Frequencies

433 MHz and 866 MHz

Passband

Maximum 3 MHz centered at each operating frequency

Minimum Gain

15 dB at both frequencies

Maximum Output Power

10 dBm

Characteristic Impedance

50 Ω

Input/Output Matching

50 Ω matching preferred

Measurement Parameters

S11, S21, gain, bandwidth, and output power

S11

≤ –10 dB preferred at both operating frequencies

Technology

Microstrip-based RF amplifier / lumped-element or hybrid implementation

Amplifier Device

Transistor, RF MMIC, or other suitable active device

Substrate

FR4 or any RF-grade laminate

Must Include

  • Dual-Band Operation: The same amplifier should support both 433 MHz and 866 MHz
  • Simulation: Circuit and EM simulation with validation
  • Hardware: Fabrication and experimental validation are mandatory
  • Stability: Stable operation over the intended operating frequency range
03

Design of a Metasurface-Enhanced High-Gain Antenna

Introduction

High-gain antennas are important for point-to-point communication, radar, satellite communication, and emerging wireless systems. Metasurfaces can manipulate electromagnetic waves and enhance antenna radiation characteristics without significantly increasing the overall antenna profile. In this problem, participants are required to design a compact planar antenna integrated with a metasurface or electromagnetic periodic structure to improve gain and radiation efficiency while keeping the overall size of the antenna and metasurface as small as possible. Since compactness is a key design objective, the combined physical size of the antenna and metasurface will be evaluated as one of the parameters for judging the design contest entries.

Design Specifications and Rules

Antenna Type

Microstrip / planar antenna

Operating Frequency

5.2 GHz

Substrate

FR-4 or any RF-grade laminate

Impedance

50 Ω

S11

≤ –15 dB

VSWR

≤ 2

Gain

≥ 8 dBi

Efficiency

≥ 75%

Bandwidth

≥ 8%

Polarization

Linear

Must Include

  • Conventional antenna design
  • Metasurface-enhanced design
  • Unit-cell/electromagnetic analysis
  • Comparison of S11 and Gain for antenna with and without metasurface
  • Gain and efficiency
  • Radiation pattern
  • Surface-current/field distribution
  • Parametric optimization
  • Fabricated prototype
04

Design of a High-Frequency double-Band RF Rectifier for RF Energy Harvesting

Introduction

The rapid growth of wireless communication systems has resulted in the presence of significant amounts of ambient RF energy in the environment. RF energy harvesting provides a potential approach for powering low-power wireless sensors, IoT devices, and battery-assisted systems by converting incident RF energy into usable DC power. An RF rectifier is a key component of an RF energy harvesting system, where the received high-frequency AC signal is converted into DC voltage using nonlinear devices such as Schottky diodes. The performance of the rectifier strongly depends on the diode characteristics, input impedance, matching network, operating frequency, input power level, and load resistance. In this problem, participants are required to design, simulate, fabricate, and characterize a high-frequency double-band RF rectifier capable of converting RF signals from two different frequency bands into DC power. The design should demonstrate effective impedance matching, RF-to-DC conversion, and stable operation across the selected frequency bands. The project provides students with practical understanding of RF matching networks, nonlinear circuit behaviour, harmonic generation, diode rectification, electromagnetic/circuit co-simulation, and RF energy harvesting.

Design Specifications and Rules

Rectifier Type

Single-stage or multi-stage RF rectifier

Operating Bands

Dual-band

Frequency Bands

Band 1: 2.4 GHz

Band 2: 5.8 GHz

System Impedance

50 Ω

Technology

Microstrip / PCB-based implementation

Rectifying Device

Schottky diode (Doubler) or suitable RF diode

Substrate

FR-4 or any RF-grade laminate

Input Power Range

+5 dBm to +10 dBm

DC Output Voltage

≥ 1 V

RF-to-DC Conversion Efficiency

≥ 30% (preferred)

Input Matching

S11 ≤ –10 dB at both frequencies

Maximum PCB Size

60 × 60 mm²

Output

DC voltage and efficiency versus frequency and input power

Must Include

  • Complete rectifier circuit and PCB layout
  • Two-band RF input matching network
  • Schottky diode-based rectification stage
  • DC-pass/RF-blocking network
  • Simulation of input matching
  • RF-to-DC conversion analysis
  • DC output voltage versus input RF power
  • Conversion efficiency versus input power
  • Performance comparison at all two frequencies
  • Harmonic analysis
  • Load-resistance optimization
  • Parametric study of matching network
  • Fabricated PCB
  • Experimental validation using RF signal generator/VNA and power measurement equipment